收藏本站
April 2001
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench ? MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
? Load switch
? Battery protection
? Power management
D2
Features
? –2.2 A, –20 V. R DS(ON) = 125 m ? @ V GS = –4.5 V
R DS(ON) = 190 m ? @ V GS = –2.5 V
? Low gate charge
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
? SuperSOT TM -6 package: small footprint 72%
smaller than standard SO-8); low profile (1mm thick)
D1
S1
4
5
3
2
SuperSOT
TM
-6
G1
S2
G2
6
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–20
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–2.2
A
– Pulsed
–6
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ J C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.310
Device
FDC6310P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2001 Fairchild Semiconductor Corporation
FDC6310P Rev C(W)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDC6312P MOSFET P-CH DUAL 20V SSOT-6
FDC6318P MOSFET P-CH DUAL 12V SSOT-6
FDC6320C MOSFET N/P-CH DUAL 25V SSOT6
FDC6321C MOSFET N/P-CH DUAL 25V SSOT-6
FDC6327C MOSFET N/P-CH DUAL 20V SSOT-6
FDC6333C MOSFET N-CH/P-CHAN 30V SSOT6
FDC634P MOSFET P-CH 20V 3.5A SSOT-6
FDC637AN MOSFET N-CH 20V 6.2A SSOT-6
相关代理商/技术参数
FDC6310P_Q 功能描述:MOSFET Dual P-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6312P 功能描述:MOSFET SSOT-6 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6312P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6312P_Q 功能描述:MOSFET SSOT-6 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6318 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel 1.8V PowerTrench Specified MOSFET
FDC6318P 功能描述:MOSFET SuperSOT-3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6318P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6318P_Q 功能描述:MOSFET SuperSOT-3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube